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- The figure given below represents the energy-band diagram in the p-type semiconductor of a MOS capacitor, indicating surface potential as 0.254 V and the space charge width is 0.30 µm. Then the acceptor doping concentration is x 10¹5 cm-3. (Assume Esi = 11.7 &&0 8.85 x 10-14 F/cm). Os = 0.254 V oxide Xd 0.30 μm p-type E Efi EF MM EvThe conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 × 10-4 s/m. Find the barrier potential at 300°K, if the µn = 2.4µp?Q7/ Silicon has a conductivity of 5 x 10- (N.m)- when pure. How many indium atoms/m3 are required so that the conductivity of 200 (.m)- could be achieved in silicon using indium as an impurity? m2 Given that the mobility of holes in silicon is 0.05 and of electrons is V. Sec m 0.13 V. Sec
- Silicon is doped with an indium concentration of 8x10^19 / cm^3. Is indium a donor or acceptor impurity? Find the electron and hole concentrations, the electron and hole mobilities, and the resistivity of silicon material at 300K. Is this material n- or p-type?A typical n-type GaAs Gunn diode has electron density of n=1018 /cm3, electron density andmobility at lower valley nl=1016/m3 and μl= 8000 cm2/Vs , electron density and mobility atupper valley nu=1014/m3 and μu=180 cm2/Vs temperature T=300K. Determine theconductivity and resistivity of the diode and show parametric values on typical graph of 2valley model theory.Subject - Semi Conductor's At 300K, fermi level is found to be 0.2eV below the edge of conduction band for an n-type silicon semiconductor. Find the electron and hole concentrations. After doping again, fermi level is now founded 0.25eV below the edge of conduction band. Find the type and concentration of impurity atoms added at the later stage At 300K, Nc= 2.8x 1019 cm3
- Q7/ Silicon has a conductivity of 5 x 10-4 (N.m)-1 when pure. How many indium atoms/m3 are required so that the conductivity of 200 (N.m)-1 could be achieved in silicon using indium as an impurity? Given that the mobility of holes in silicon is 0.05 and of electrons is V. Sec m2 0.13 V. SecAn impurity such as antimony (Sb) has five electrons in its outer shell. When there are Sb impurities in Silicon,..... Please select one: a. the Crystal will be negatively charged b. an N-type material is formed c. both of the above d. None of the aboveThe applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.
- Silicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity? Find the electron and hole concentrations at 300 K. Is this material n-type or p-type? Find the electron and hole mobilities. What is the resistivity of the material?A picce of p-type silicon with a cross section of I mm x 1 mm and length of 10 mm has i resistivity of 10 0-m at 27°C. Ohmic contacts are fabricated on the surfaces at either end of the longest dimensions of the bar and a DC voltage of 10V is applied, Assuming a hole mobility uh -0.03 m/V-s, calculate: The impurity concentration The velocity of the carriers through the bar The time taken for carriers to transverse across the bar The magnitude of the current in bar iv)Consider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3