Q2/ Find the total resistance of the following networks of the Figures (2) & (3)? 120 &120 &n Fig. (2) AZ AZO 220 220 220 220 Fig. (3)
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- a) Compare metallic foil vs semiconductor strain gauges (construction, advantages and disadvantages). b) Consider a Wheatstone bridge circuit (Figure 1) that has all resistances equal to 250 ?. The resistance R1 is a strain gauge that cannot sustain a power dissipation of more than 0.25 W. What is the maximum applied voltage that can be used for this bridge circuit? At this level of bridge excitation, what is the bridge sensitivity?Compute for the following values and show compelete solutions. Find the following: A.) isc B.) iN C.) VN D. Draw circuit equivalentIn complete model the reverse resistance provide pass to( ........)
- 4. From the figure shown which is series-parallel, the following values are: ID ohms in series with the parallel combination of 30 and DD ohms respectively. If the supply voltage is bD volts, find the following: a) equivalent resistance b)total current c)individual current d)current at 3D and D ohms onlyA PMMC instrument has internal resistance of 0.63 kQ and gives full scale deflection for 31 mA. The required resistance value of multiplier resistors for employing the meter as a multi range voltmeter for voltage range 64 V will be ohms. O a. 205.82 O b. -145.62 O c. 1434.52 O d. 101556.30Question 3: If the currents are in the same direction for a pair of parallel running wires, the currents on the wires are referred as Common Mode currents, ICM. On the other hand, if one of the currents is running in reverse direction (as they should normally do), the currents are referred as Differential Mode currents, IDM. It is essential in analog circuit design to keep track of differential and common mode currents. Referring to the following illustrations, assume that the separation between the wires, d, is 4 mm, the magnetic field observation point, S, is 20 mm away from the right wire, ICM- 5 mA, and IDM= 150 mA.
- Determine VGS and VDS for the FET circuit in figure. Assume this particular FET has minimum value of ID(on) = 500mA at VGS = 6V and VGS(th) = 2V. Also, (b) Identify the type of FET device used in the circuit diagram.V1 Si T1 120 Vrms 60 Hz R1 S2.5kO 4:5 Determine the following using 2nd approximation a) VDC b) IDC c) VLPK d) ILPK e) VLRMS f) ILRMSPlease answer all subpart I will like it please ASAP for like this...
- 25mA!! With the help of VBB source, adjust the IC current to 25mA by increasing the IB current. To this current Measure the corresponding VCE voltage. Measured IC, VCE mark the intersection point of the values on the graph as the measured point Q on the graph.(b) With an appropriate diagram, describe the operation of a current to voltage converter (c) In Figure Q.2c, a 12 bit microcontroller is used to monitor level of fuel-oil's tank with a capacity of 5000 liser and a reference voltage of 25 V. DAC Figure 0.2c www Indicator barFor an RTD the relationship between resistance and temperature is a. proportional b. no relation c. equal d. inversely proportional