Correct the mistake for the underlined phrase in each of the following 1. With forward bias to a p-n junction , the width of depletion layer remains the same 2. A p-type semiconductor material is doped with donor impurities . 3. When a pentavalent impurity is added to a pure semiconductor, it becomes an insulator 4. Addition of pentavalent impurity to a semiconductor creates many Bound electrons 5. A two-diode rectifier will not operate without a capacitive filter

Correct the mistake for the underlined phrase in each of the following 1. With forward bias to a p-n junction , the width of depletion layer remains the same 2. A p-type semiconductor material is doped with donor impurities . 3. When a pentavalent impurity is added to a pure semiconductor, it becomes an insulator 4. Addition of pentavalent impurity to a semiconductor creates many Bound electrons 5. A two-diode rectifier will not operate without a capacitive filter

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

See similar textbooks

Similar questions

How is a solid-state diode tested? Explain.
a) What is n-type semiconductor materials? What are the majority and the minority cariers? b) What is p-type semiconductor materials? What are the majority and the minority cariers? c) What is depletion region of a p-n junction diode? d) Describe in your own words the forward-bias and reverse- bias conditions of a p-n junction diode. e) Draw a Diode Symbol and label the anode and the cathode. Si Ge 2 ka f) Find V, in the circuit shown in +20 V 2 k2 15V Fig. Fuad Al-Mannai EENG261 Page 1
An addition of trivalent impurity to a semiconductor creates many a. Holes b. Free electrons c. Valence electrons d. Bound electrons A hole in a semiconductor is defined as a. A free electron b. The incomplete part of an electron pair bond C. A free proton d. A free neutron As the doping to a pure semiconductor increase, the bulk resistance of the semiconductor a. Remains the same b. Increases C. Decreases d. None of the above
Name the majority carrier in an n-type and p-type extrinsic semiconductor. Briefly explain the behavior of the carriers during the formation of the P-N junction and their relation to the depletion region appears in the junction. (c)
When a pentavalent impurity is added to a pure semiconductor, it becomes ......... 1. An insulator 2. An intrinsic semiconductor 3. p-type semiconductor 4. n-type semiconductor
A p-type semiconductor joined to an n-type semiconductor ... Pick those that apply. Will not allow current to flow in either direction. Has electron current flowing from the n-type to the p-type material Makes a diode Allows positive current flow from the p-type to the n-type material
Problem 1. Define doping. 2. What is the difference between a pentavalent atom and a trivalent atom? 3. What are other names for the pentavalent and trivalent atoms? 4. How is an n-type semiconductor formed? 5. How is a p-type semiconductor formed? 6. What is the majority carrier in an n-type semiconductor? 7. What is the majority carrier in a p-type semiconductor? 8. Describe forward bias of a diode.
In your own words and with the aid of suitable diagrams, describe the following: Explain what the barrier potential is and how it is developed in pn junction diode. What is the typical value of the barrier potential for a silicon diode?
(1) Describe the behaviour of a p-n junction under forward and reverse biasing in terms of semiconductor behaviour and sketch the V-I Characteristics of a p-n Junction.
4.) In which mode will a diode generally not conduct electricity? a. Bidirectional Biased b. None of these c. Forward Biased d. Reversed Biased 5.) Consider the following schematic symbol of a semiconductor device: Which side is the Cathode? (Picture inserted down below) a. Side A b. Both side A and B c. Side B d. Neither side A or B 8.) Integrated circuits can be broken down into three basic categories. Which category does an operational amplifier (or op-amp) fall into? a. Analog b. None of these c. A combination of analog and digital d. Digital
Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE
Calculate the current flowing through the given circuit and the voltage value at the V0 ends. (Threshold voltage = 0.3V for Germanium diodes, Threshold voltage for silicon diodes = 0.6V)