C1 3 µF C4 4.5 µF C2 1 µF V1 C5 500 V 4.5 µF C3 1 µF find total charge C6 4.5 µF of the circuit C7 4.5 µF
Q: II. COMPUTER NO. COVERSION. CONVERT THE FF. NO. BELOW. SHOW YOUR SOLUTIONS. 1. Convert EF216 TO BASE…
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Q: a. The total current (IT) b. V30 c. Ic d. V40 IA Ic 30 IB 1o 30. 50 20V 20 40
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Q: 6. I= . E = 200 V R, = 150 0 R2 = 300 2 %3D
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Q: connected in para Ohm, R2=500 Ohm and R3=800 Ohm. The total resistance is: Select one: a. 321.42 Ohm…
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Q: 6. I=. E= 200 V- R, = 150 0 R2 = 300 0 %3D
A: In this question we have to find the value of current across resistor R1
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Q: In the figure: R1 = 27.3 Q, R2 = 93.1 Q and R3 = 1571.12 Q, then determine the value of the source…
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Q: • 29000kw 7000Ω • 0.0003ms . 0.05 A • 0.00009v • 7000000v 9000kw Q2- converts the following:- a.…
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Q: Vi R₁ + R₂ A R4 Figure Q4.d R3 Vo
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Q: 6. R equivalent AO R, R2 600 600 BO Ili
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Q: the equivalent resistance across A R; = 60 R3 = 40 R3 = 102 R4 = 80 Rg = 60 Rea R2 = 82 R = 20 Re =…
A: RAB=10+2∥6+8∥6+4∥8+4∥8+6RAB=4+8∥6+4∥8+4∥8+6
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Q: 1) Draw the circuit for Y = (A+ (B · C)) + D %3D
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Q: 3.B) Convert the following to simplified SOP: (A’+B+C')(A'+C"+D)(B'+D')
A: Given POS expression(A'+B+C')(A'+C'+D)(B'+D')
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Q: 12Ω 6Ω V. 60 V R 24 V The value of Vo in the circuit is V. The power absorbed by the 12-Q resistor…
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Q: Rab(C.d connected)=....2 Rab(C,d open)=.....Q a 2.52 20 b.
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Q: Determine v(t) for t>0 in Figure Q1 (b). R3 R5 20 Ω t = 0 R1 R2 L1 C1 12V 8Ω 20 Ω 20 H 8 mF v 4 u(1)…
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Q: R1 202 25 12 V 15V 16NF C2 10NE R3=30
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- 1. Identify the errors (if any) in the following full-wave rectifier circuits: a) b) D2 D2 D1 D3 D1 D3 ci R1 C1 R1 V1 Vout V1 Vout D4 D4 c) d) D2 D2 D1 D3 D1 D3 + R1 in C1 R1 C1 v1 Vout V1 Vout D4 D4 uIConsider the circuit shown in the figure below with R1=16 ko and R=8 klQ. The Zener diode voltage is Vz = 3.5 V, then the currents Iz and lu respectively, are equal to: Ri of ww RL 20 V O a. 0.594 mA, 0.438 mA Ob. 0.394 mA 0.237 mA Oc 0.794 mA, 0.637 mA O d. 0.994 mA, 0.838 mADetermine the range of V₁ that will maintain V₁ at 8V and not exceed the maximum power rating of the Zener diode. Given Rs is 88ohms and RL is 0.24 kohms. . ܫܩܦܢ V₂ o PZ man Rs V₂=8V = 400 mW R₂
- FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…Rectifier Circuit. 1. What is V1 reading? a. 110V b. 220V c. 0V d. 146.67V 2. What is V2 reading? 146.67V 207.42V 0V 103.7V 3. What is V3 reading? 132V 104V 207.42V 147V Thank u.Q2) The expected average and RMS output voltage of the following PLECS circuit is equal to Single-phase diode rectifier L: 0.05 01 V_R (V i_N Scope V: 120 w: 2*pi*60 v_N R: 2.50 C: 500e-6 Oa) 40V, 84.85 V Ob) 38 V, 84.85V c) 38V, 80.2V O d) 40V, 38V Probe Probe
- Q3: The figure below includes a bridge full-wave rectifier circuit with a diode type is1N4007. The input voltage is Vin V2 120 sin 2n60t 5:1 D3 D1 120 V RL Vp(out) D2 DA 10 kN a) Draw the output voltage waveform for the circuit in the figure and include thevoltage values. b) What is the peak inverse voltage (PIV) across each diode? c) Determine the rms voltage, current and power delivered to RL d) Determine the average voltage, current, and power delivered to RL e) What is the ratio of Po(de) to Po(ac)? lllGiven the following circuit: Assuming D1 is ON and D2 is OFF, with Vs1 = 12.6 V, Vs2 = 1.3 V, R₁ = 2.9 k2, R₂ = 7.3 k2, then the current going through R₂ is equal to: Use the CVD model for the diode, with VD = 0.7 V. D₁ WWD R₁ a. 1.039216 A O b. 0.001630 A O c. 0.001235 A O d. 0 A e. 0.001167 A www R₂ D₂ V₁2Determine the load resistor voltage waveform for the circuit below. Include voltage values and show computation. The rectifier is silicon. R1 +5 V 1.0 kN R1. 1.0 kN Vin oV -5 V
- A full-wave bridge rectifier is to be designed to produce a peak output voltage of 10 V, deliver 100 mA to the load, and produce an output with a ripple of not more than 7.5 percent. Assume that the frequency of the source is 50 Hz, and that a constant drop voltage model with Vp = 0.7 V is t of used. D1 D2 vs(1) RL vz(?) D3 D4 Source Rectifier Load a) Calculate the needed value of the load resistor R1. 1 b) Calculate the peak value of the voltage source which should be used V (t). [ c) What will be the value of the ripple voltage V7 [ d) Calculate the value of the required capacitor C. [ e) Explain in your own words the difference between the output with and without using the capacitor in the circuit above.in the circuit shown below. Determine the following A)Vs (at the secondary) B)Vout(across R) C)Vrip (ripple Voltag) D) VDC full wave rectifier E) PIV(peak inverse Voltage) V1 C1 100µF 240V / 50HZ R1 104µF 1k T1 30:1Except for FinFET and GaaFET discussed in the lecture, there are many new designs of FET. Please do a detailed study on any of them. In less than 200 words, state the advantages of it over the traditional