Boron atoms are added to a Si film resulting in an impurity density of 4 x 10¹6 cm-³. (a) What is the conductivity type (N-type or P-type) of this film? (b) What are the equilibrium electron and hole densities at 300 K and 600 K? (c) Why does the mobile carrier concentration increase at high temperatures? (d) Where is the Fermi level located if T = 600 K?
Boron atoms are added to a Si film resulting in an impurity density of 4 x 10¹6 cm-³. (a) What is the conductivity type (N-type or P-type) of this film? (b) What are the equilibrium electron and hole densities at 300 K and 600 K? (c) Why does the mobile carrier concentration increase at high temperatures? (d) Where is the Fermi level located if T = 600 K?
Modern Physics
3rd Edition
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Chapter10: Statistical Physics
Section: Chapter Questions
Problem 26P
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