An intrinsic semiconductor has n 2x1016/m3 was doped with 1018 /m³acceptor impurities. If the mobility of the electrons is 0.13m?/y.s and themobility of holes is 0.04m2/y.s. determine the conductivity, and what is thepercentage ratio of the electrons and holes conductivity?

There are two types of semiconductor such as Intrinsic semiconductor Extrinsic semiconductor The…

Answered: as n 2x1016/m³ was doped with -bility…

Engineering

Electrical Engineering

as n 2x1016/m³ was doped with -bility of the electrons is 0.13m2/y , determine the conductivity, and

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

See similar textbooks

Related questions

Q: A phosphorus- doped silicon wafer for an electrical component has an electrical resistivity of 8.33…

Q: find E for the sheet charge (ps) = 20p mC/m if p32, p=-2 Ø=0-27t %3D

Q: Q3: find the relaxion time for electron if the mobility of electron is 1400cm'v'sland the / m,…

Q: A cylindrical piece of Ge having diameter of 3 mm, is doped with 1015 atom/ m of arsenic (As). What…

A: The given data's are, The resistance is R=10 kΩ, The diameter is D=3 mm, ND=1015 atom/m3, The…

Q: Question 4-) The linear electron-concentration profile shown in the figure below has been…

A: The given electron concentration profile is shown below: It is given that: no=1017 /cm3W=4…

Q: a wafer of silicon doped with 6×1019/cm³ boron, verify which the boron a donor or acceptor impurity.…

Q: 3- A cylindrical piece of Ge having diameter of 3 mm, is doped with 1015 atom/ m of arsenic (As).…

A: The resistance is of cylindrical shape they mention the diameter from the diameter we can calculate…

Q: In a P-type germanium, n = 2x10" electrons/m' and the density of boron 4x102; atoms/m. The…

A: The intrinsic carrier concentration is n=2×1019 m-3. The mobility of electrons is μe=0.4 m2 V-1s-1…

Q: Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

Q: Q3: find the relaxion time for electron if the mobility of electron is 1400cm'v's' and the / m,…

A: Given, Mobility of electron, μ=1400 cm2v-1s-1 mo = 0.26

Q: -3 Germanium doped with 1024 m Al atoms is a semi-conductor at room temperature and each Al atom…

A: The Al-SI bond create a holes and this hole act as a positive charge carrier. So the material…

Q: 12. If the conductivity of the pure Germanium change with temperature according the fol- lowing…

A: Given data: σ=e-4350T

Q: Q6: Determine the probability f (E) for electrons occupied in conduction band at 300°K, considering…

Q: Compare and contrast the temperature dependence of the electrical conductivities of a intrinsic…

A: we need to compare the temperature dependence of the electrical conductivity of intrinsic…

Q: Please explain temperature dependence of carrier concentration on metals and semiconductors…

A: In metal the carrier concentration is almost temperature independent because metal have a large…

Q: 1 300° k, if the conductivity is onductivity of 0.1l per ohm per D0 cm2/v-s, and for Silicon

Q: pload answer sheets a) In a solid, consider the energy levels lying 0.02 ev and 0.04eV below Fermi…

Q: Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

A: Here i have found the concentration of electrons in n type si and concentration of holes in p type…

Q: A silicon wafer (n;=1.388×10'6 atoms / m³) is doped with 4.50 × 10" boron atoms/m at 27°c. The…

Q: 5. Consider the energy diagrams for Si, Ge, and GaAs shown below (also in Slide 14 in Lecture 2.3…

A: Calculation of wavelengths for given energy diagrams of Si, Ge and GaAs : Enegy bandgap of Ge,…

Q: H.W5: If the ratio of mopility of electrons to mopility of holes is 3:1 and the condicutivity of…

A: Here i have derived the answer. Ni=intrinsic carrier concentration. P=Na= acceptor concentration.

Q: Rank in order, from largest to smallest, the electric field strengths En to Ec at points B and C. 2r…

Q: Q2: Specimen of semiconductor with size of (1*2*1)mm' has electrical resistance of (21602) at room…

A: The pure semiconductor contains the same no. of electrons and holes. The cuboid-shaped material's…

Q: H.W5: If the ratio of mopility of electrons to mopility of holes is 3:1 and the condicutivity of…

Q: Find the concentration o electrons & holes in (a) N-type Si at 300K, if the conductivity is…

A: I have found the value of electron and hole concentration in n type and p type semiconductor.

Q: 1. Pure germanium has (4 × 104) atom. cm doped by indium atoms, the impurity is add to the extent of…

A: Given that intrinsic concentration of Ge is 2.5*1013 cm-3. ni==2.5*1019 m-3. The mobility of…

Q: 9. Apiece of pure semicon duct or contains 5x 1018 don or at oms at 27 °C. How far the Fermi level…

A: Here it will be n type after adding extra donar atoms in the semiconductor.

Q: 3 A cylindrical piece of Ge having diameter of 3 mm, is doped with 10 atom m of arsenic (As). What…

Q: A Silicon bar having a length of 4μm, doped with n-type at 10"/cm", calculate the current density…

A: Given,Length, l=4μmConcentrationof n-type material, n=1017/cm3Applied voltage, V=2VCross-sectional…

Q: The ability to move holes in a semiconductor at T = 300 K is 500 cm? / V is the voltage given as…

Q: The maximum drift velocity of electrons in silicon is 107 cm/s. If the silicon has a charge density…

A: Given data, The value of maximum drift velocity is 107 cm/s. The value charge density is 0.4 C/cm3.…

Q: Q1: Estimate the ratio of the electron densities in the conduction bands of silicon (E, = 1.14 eV)…

Q: What is the benefit of resistance(Charging Resistor)(10 MQ) in an experiment A.C. Breakdown Test of…

A: A spark gap has two conducting electrodes separated by a gap usually filled with gas or air. This…

Q: Q2:- A semiconductor material has electron and hole mobilities µn and µp respectively. When the…

A: The solution is given below

Q: H.W5: If the ratio of mopility of electrons to mopility of holes is 3:1 and the condicutivity of…

Q: Explain with the help of band structure diagrams why the following operations can result in the…

A: Ans (a) The conductivity of semiconductors is increased by adding an appropriate amount of suitable…

Q: Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

A: In a doped semiconductor bar, the electron and hole concentrations are not equal. The concentration…

Q: conducting line on an IC chip is (2.8 mm) long, and has a rectangular cross-section (1x 4 um). A…

A: Given data: l=2.8 mmA=4 μmIl=5 mAVl=100 mVμe=500 cm2/V.sec

Q: Silicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity?…

A: Given T=300 K Boron is an acceptor type impurity so, NA=4×1018 /cm3ND≈0 /cm3 For p -type…

Q: 1. Pure germanium has (4 x 1022) atom. cm-3 doped by indium atoms, the impurity is add to the extent…

Q: Consider a state in a metal conduction band that is 0.1eV above the Fermi energy. The metal is at a…

A: Thermal equivalent temperature Vt Vt = kt/q . kt = T /11600 Given T = 1178 K KT = .10155…

Q: The intrinsic carrier concentration for Si is 1010/cm3. If 1014 donor atoms/cm3 is added, then find…

A: According to the law of mass action for semiconductors, the following relation can be written:…

Q: A cylindrical piece of Ge having diameter of 3 mm, is doped with 1015 atom/ m3 of arsenic (As). What…

A: From the formula of resistance we can able to find the length of the cylindrical piece which is made…

Q: QI. In a P-type germanium, n, = 2x10" electrons/m' and the density of boron 4x102 atoms/m. The…

A: For the given data conductivity is calculated before and after adding of boron

Q: Consider plane electrodes with a solid insulator between them. Find the electric field strength at…

A: To find the breakdown voltage at that field

Q: 5.45 For intrinsic GaAs, the room-temperature electrical conductivity is 10-6 (ohm-m)-1, the…

A: According to the question we have to find the value of carrier concentration ni.

Q: 4) What is the probability of an electron being thermally promoted to the conduction band in diamond…

A: Using probability density function we can find the probability

Q: Consider germanium Ge and GaAs material. Which material has lower intrinsic carrier concentration ni…

Concept explainers

Types of Charge Carriers

A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.

Question

An intrinsic semiconductor has n 2x1016/m3 was doped with 1018 /m³
acceptor impurities. If the mobility of the electrons is 0.13m?/y.s and the
mobility of holes is 0.04m2/y.s. determine the conductivity, and what is the
percentage ratio of the electrons and holes conductivity?

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step by step

Solved in 2 steps

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Types of Semiconductor Material and Its Energy Band Analysis

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

How many valence electrons are generally contained in materials used for insulators?
a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material. b)Explain what n and p-type semiconductors are using their band structures.
Calculate the hole and electron densities in a N-type germanium semiconductor at room temperature. The conductivity of semiconductor bar is 500 S/cm. The mobility of electrons and holes at room temperature for germanium is 3800 cm2 /Vs and 1800 cm2 /Vs respectively and ni= 2.5 × 1013/cm3
Consider an extrinsic semiconductor. Given: /n = 6550 cm² /V sec Mp = 400 cm²/V sec ni = 5.6 x 1012/cm³ Find out the hole and electron concentration in the semiconductor when conductivity is minimum (in cm-³).
In a semiconductor it is observed that 0.7 of the current is carried by holes and 0.3 by electrons. If the drift speed of the electrons is two times that of the holes, what is the ratio of electrons over holes?
The equilibrium electron and hole concentration for a semiconductor is 3x1017/cm3 and 2800 /cm3. Estimate the intrinsic carrier concentration of the semiconductor.
How many valence electrons does a semiconductor has? a. 2 b. 3 c. 6 d. 4 When pure semiconductor is heated, its conductance a. Goes up b. Goes down C. Remains the same d. Can't say When a trivalent impurity is added to a pure semiconductor, it becomes a. A conductor b. An intrinsic semiconductor C. P-type semiconductor d. N-type semiconductor
Consider the two devices shaun below which are fabricated from the semiconductor material. same i) ii) p-type metal n-tmpe Metal metel n-pe metal than ncident on b) if the metal contects across the device is connected with a wire, do you expect current flow hE any ii). in device i) and Explain in te werds each.
Calculate the voltage and current of the diode in the figure for each of the diode's models. In each case, determine the voltage across the resistor. Additionally, in each case, determine the diode's power. Assume that Rb is ten ohms.
Which statement(s) is (are) true about a P-N junction: A. P-N junction consists of n-type and p-type semiconductor materials.B. Free electrons in n-type diffuse across junction to p-type.C. A depletion region formation happens due to electrons and holes moving away from each other due to the electric field.
Q. Calculate the hole and electron densities in a N-type germaniumsemiconductor at room temperature. The conductivity of semiconductor bar is 500 S/cm. The mobility of electrons and holes at room temperature for germanium is 3800 cm2/ Vs and 1800 cm2/ Vs respectively and ni= 2.5 × 1013/cm3.
A. Why does the conductivity of a semiconductor and some insulators change with impurity content? Compare this with the behaviour of metallic conductors. B. Discuss the location of the Fermi levels of intrinsic and extrinsic (n-type and p-type) semiconductors in low temperature and high temperature ranges. C. Discuss why the structure of the p-n junction is so important to modern technologies that impact our daily life.