A Si photo-detector has a length of L= 10 um and a hole lifetime of t, =1x 10° s. If a voltage of 5 V is applied across the detector length, the detector gain "Gp" at the applied voltage will be: %3D Select one: O A. Gph = 2.925 %3D B. Gph = 25.000 C. Gph = 4.000 D. Gph = 10.000 O E. Gph = 1.250 %3D %3D %3D
A Si photo-detector has a length of L= 10 um and a hole lifetime of t, =1x 10° s. If a voltage of 5 V is applied across the detector length, the detector gain "Gp" at the applied voltage will be: %3D Select one: O A. Gph = 2.925 %3D B. Gph = 25.000 C. Gph = 4.000 D. Gph = 10.000 O E. Gph = 1.250 %3D %3D %3D
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Transcribed Image Text:4G
75% DI 9:07
SiGeGaAsprope.
Prof. O M Khrcis
May 2, 2020
: Si, Ge, Ga As Parameters and Universal Constants
UNIVERSAL CONSTANTS
6.63 x 10-34 J.s
9.11 x 10-31 Kg
Properties
SEMICONDUCTOR
h
Si
Ge
GaAs
E, (eV)
n, (cm-3)
Hn (cm? /V – s)
Pp (cm? /V – s)
N. (cm-3)
N, (em-3)
m:/m.
m; /m.
E, (F/m)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
8.85 x 10-12 F/m
1.05 x 10-34 J – 8
8.6 x 10-5 eV/K
1500
3900
8500
450
1900
400
2.78 x 1019| 1.04 x 1019 | 4.45 x 1017
9.84 x 1018
K
6 x 1018
7.72 x 1018
KT/q
26 mV (T = 300 K)
0.082
0.98
0.067
КТ
26 meV (T = 300 K)
0.28
0.49
0.45
3 x 10° m/s
11.7
16
13.1
Nair = 1
NGaAs = 3.66
Some useful relations
EgAl, Ga-rAs(r) = 1.424 + 1.247x
Egin, Ga-1Ae(x) = 0.36 + 1.064r
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/cm?
1
...
Transcribed Image Text:False
A Si photo-detector has a length of L= 10 um and a hole lifetime of t, =1x 10° s. If a voltage of 5 V is applied across the
detector length, the detector gain "G" at the applied voltage will be:
%3D
Select one:
O A. Gph = 2.925
B. Gph = 25.000
C. Gph = 4.000
%3!
D. Gph = 10.000
%3D
E. Gph = 1.250
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