1- The silicon-controlled rectifier (SCR) can be triggered on by a ------ at the gate---- below the specifiedand turned off by reducing the2- Thecan conduct current in either direction and is turned on when ais exceeded. It turns off when the current drops below the holding value.3-of a unijunction transistor (UJT) determines the voltage at which thedevice will trigger on4-- The voltage at which a device enters the forward-blocking region.-; a three-terminal single pn junction device that exhibits a negative5-resistance characteristic.6- The Schottky barrier (hot-carrier) diode has a lowera larger reversesaturation current, and a smaller PIV than the conventional p – n junction variety.It can also be used at higher frequencies because of the reduced -7- Theis capable of converting light energy in the form of photons intoelectrical energy in the form of a difference in potential or voltage.8- A photoconductive cell is one whose terminal resistanceexponentiallywith an -- in incident light.- emits a beam of radiant flux when forward-biased.9-10-LCDS have aLEDS, but their lifetime isand they require aninternal or external

As per guideline we are supposed to answer 3 sub parts in case of multiple subpart kindly repost…

1- The silicon-controlled rectifier (SCR) can be triggered on by a -- at the gate and turned off by reducing the ------ elow the specified- 2- The ----- can conduct current in either direction and is turned on when a is exceeded. It turns off when the current drops below the holding value. 3- of a unijunction transistor (UJT) determines the voltage at which the device will trigger on - The voltage at which a device enters the forward-blocking region. ; a three-terminal single pn junction device that exhibits a negative 4- 5- resistance characteristic.

1- The silicon-controlled rectifier (SCR) can be triggered on by a -- at the gate and turned off by reducing the ------ elow the specified- 2- The ----- can conduct current in either direction and is turned on when a is exceeded. It turns off when the current drops below the holding value. 3- of a unijunction transistor (UJT) determines the voltage at which the device will trigger on - The voltage at which a device enters the forward-blocking region. ; a three-terminal single pn junction device that exhibits a negative 4- 5- resistance characteristic.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Q-5: Fill in the following blanks: 1- The silicon-controlled rectifier (SCR) can be triggered on by a at the gate and turned off by reducing the --- below the specified - 2- The -- can conduct current in either direction and is turned on when a is exceeded. It turns off when the current drops below the holding value. 3- --- of a unijunction transistor (UJT) determines the voltage at which the device will trigger on - The voltage at which a device enters the forward-blocking region. - a three-terminal single pn junction device that exhibits a negative 5- resistance characteristic. 6- The Schottky barrier (hot-carrier) diode has a lower --- a larger reverse saturation current, and a smaller PIV than the conventional p- n junction variety. It can also be used at higher frequencies because of the reduced -- 7- The -- is capable of converting light energy in the form of photons into electrical energy in the form of a difference in potential or voltage. 8- A photoconductive cell is one whose…
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Q-5: Fill in the following blanks: 1- The silicon-controlled rectifier (SCR) can be triggered on by a at the gate ------ and turned off by reducing the below the specified- 2- The ------ can conduct current in either direction and is turned on when a is exceeded. It turns off when the current drops below the holding value. 3- of a unijunction transistor (UJT) determines the voltage at which the device will trigger on 4- The voltage at which a device enters the forward-blocking region. 5- -; a three-terminal single pn junction device that exhibits a negative resistance characteristic.
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